WNSC2D08650T datasheet(3/11 Pages) WEEN

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WeEn Semiconductors

WNSC2D08650T

Silicon Carbide Diode

WNSC2D08650T

Product data sheet

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21 January 2021

3 / 11

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Values

Unit

VRRM

repetitive peak reverse

voltage

650

VRWM

crest working reverse

voltage

650

reverse voltage

650

IF(AV)

average forward current

δ = 0.5; square-wave pulse; Tc ≤ 134 °C;

Fig. 1; Fig. 2; Fig. 3

IFRM

repetitive peak forward

current

δ = 0.5; tp = 25 μs; Tc ≤ 134 °C;

square-wave pulse

IFSM

non-repetitive peak

forward current

tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse

tp = 10 μs; Tj(init) = 25 °C; square-wave pulse

385

I2t

I2t for fusing

sine-wave pulse; Tj(init) = 25 °C; tp = 10 ms

11.5

A2s

Tstg

storage temperature

-55 to 175

°C

junction temperature

175

°C

IF(AV) = IF(RMS) × √δ

Vo = 1.144 V; Rs = 0.1272 Ω

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform;

maximum values

Fig. 2. Current derating as a function of case

temperature

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