UESD3.3ST5G datasheet(2/4 Pages) ONSEMI

Part #	UESD3.3ST5G

Description	ESD Protection Diodes In Ultra Small SOD??23 Package

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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2 / 4 page

mESD3.3ST5G SERIES

http://onsemi.com

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

Test Current

Forward Current

Forward Voltage @ IF

Ppk

Peak Power Dissipation

Max. Capacitance @VR = 0 and f = 1 MHz

Uni−Directional TVS

IPP

VRWM

VC VBR

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types)

Device*

Device

Marking

VRWM (V)

IR (mA) @ VRWM

VBR (V) @ IT

(Note 2)

C (pF)

Max

Min

Typ

mESD3.3ST5G

TBD

3.3

2.5

5.0

1.0

mESD5.0ST5G

TBD

5.0

1.0

6.2

1.0

mESD12ST5G

TBD

1.0

13.5

1.0

*Other voltages available upon request.

2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.

UESD3.3ST5G Datasheet(PDF) 2 Page - ON Semiconductor

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