VB20100S-M3SLASH4W datasheet(1/6 Pages) VISHAY

Part #	VB20100S-M3/4W

Description	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

PDF	6 Pages

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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V20100S-M3, VF20100S-M3, VB20100S-M3, VI20100S-M3

www.vishay.com

Vishay General Semiconductor

Revision: 13-Mar-18

1

Document Number: 87648

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.446 V at IF = 5 A

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB, ITO-220AB, and

TO-262AA package)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-220AB,

ITO-220AB,

TO-263AB

and

TO-262AA

Molding compound meets UL 94 V-0 flammability rating



Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade

Terminals:

matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



V20100S-M3 and VF20100-M3 suffix meets JESD 201

class 1A whisker test



VB20100S-M3 and VI20100-M3 suffix meets JESD 201

class 2 whisker test

Polarity: as marked

Mounting Torque: 10 in-lbs max.

PRIMARY CHARACTERISTICS

IF(AV)

20 A

VRRM

100 V

IFSM

250 A

VF at IF = 20 A

0.69 V

TJ max.

150 °C

Package

TO-220AB, ITO-220AB,

TO-263AB, TO-262AA

Diode variation

Single die

V20100S

VF20100S

VI20100S

VB20100S

PIN 1

PIN 2

PIN 3

K

1

2

3

1

K

2

3

TO-220AB

TO-263AB

NC

A

K

HEATSINK

NC

A

K

PIN 1

PIN 2

PIN 3

PIN 1

PIN 2

CASE

PIN 3

TO-262AA

TMBS

®

ITO-220AB

1

2

3

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V20100S

VF20100S

VB20100S

VI20100S

UNIT

Max. repetitive peak reverse voltage

VRRM

100

V

Max. average forward rectified current (fig. 1)

IF(AV)

20

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

IFSM

250

A

Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH

EAS

210

mJ

Peak repetitive reverse current



at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C

IRRM

1.0

A

Voltage rate of change (rated VR)

dV/dt

10 000

V/μs

Isolation voltage (ITO-220AB only)



From terminal to heatsink t = 1 min

VAC

1500

V

Operating junction and storage temperature range

TJ, TSTG

-40 to +150

°C

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