TK7R2E10PL

2

Characteristics

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (DC)

Drain current (pulsed)

Power dissipation

Single-pulse avalanche energy

Single-pulse avalanche current

Channel temperature

Storage temperature

Mounting torque

(Silicon limit)

(t = 100 µs)

(Note 1)

(Note 1), (Note 2)

(Note 1)

(Note 3)

(Note 3)

Symbol

TOR

Rating

100

±20

60

94

270

123

46

60

175

-55 to 175

0.6

Unit

V

A

W

mJ

A

�

�

N�m

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

5. Thermal Characteristics

Characteristics

Channel-to-case thermal resistance

Channel-to-ambient thermal resistance

Symbol

Max

1.21

83.3

Unit

�/W

Note 1: Ensure that the channel temperature does not exceed 175 �.

Note 2: Limited by silicon chip capability.

Note:

This transistor is sensitive to electrostatic discharge and should be handled with care.

2021-01-26

Rev.2.0

©2017-2021

Toshiba Electronic Devices & Storage Corporation