BAS40 datasheet(1/5 Pages) RECTRON

Part #	BAS40

Description	Plastic-Encapsulate Diodes

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	RECTRON [Rectron Semiconductor]

Direct Link	http://www.rectron.com

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1 / 5 page

SCHOTTKY BARRIER DIODE

FEATURES

Low Forward Voltage

Fast Switching

BAS40 MARKING: 43•

BAS40-06 MARKING: 46

BAS40-05 MARKING

45

B AS40-04 MARKING

44

Maximum Ratings @Ta=25

℃

Parameter

Symbol

Limit

Unit

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

VRRM

VRWM

VR

40

V

Forward continuous current

IFM

200

mA

Power dissipation

PD

200

mW

Thermal resistance junction to ambient

RθJA

500

℃/W

Junction temperature

TJ

℃

Storage temperature range

TSTG

-55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Reverse breakdown voltage

V(BR)

IR=10μA

40

V

Reverse voltage leakage current

IR

VR=30V

200

nA

Forward voltage

VF

IF=1mA

IF=40mA

380

1000

mV

Diode capacitance

CD

VR=0,f=1MHz

5

pF

Reverse recovery time

t r r

Irr=1mA, IR=IF=10mA

RL=100Ω

5

ns

SOT-23

MARKING:

BAS40

BAS40-06

BAS40-05

BAS40-04

Solid dot = Green molding compound device,if none,

the normal device.

BAS40/-04/

SOT-23 Plastic-Encapsulate Diodes

-05/-06

℃

-55~+150

2020-11/02

REV:C

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