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SCTWA90N65G2V Datasheet(PDF) 4 Page - STMicroelectronics

Part # SCTWA90N65G2V
Description  Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ in an HiP247 long leads package
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SCTWA90N65G2V Datasheet(HTML) 4 Page - STMicroelectronics

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Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 400 V, ID = 50 A,
RG = 2.2 Ω, VGS = -5 V to 18 V, TJ=
25 °C
-
26
-
ns
tf
Fall time
-
16
-
ns
td(off)
Turn-off delay time
-
58
-
ns
tr
Rise time
-
38
-
ns
Table 7. Reverse SiC diode characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VSD
Forward on voltage
IF = 30 A, VGS = 0 V
-
2.5
-
V
trr
Reverse recovery time
IF = 50 A, di/dt = 4000 A/µs,
VDD = 400 V, TJ= 25 °C
-
17
-
ns
Qrr
Reverse recovery charge
-
308
-
nC
IRRM
Reverse recovery current
-
30
-
A
SCTWA90N65G2V
Electrical characteristics
DS12678 - Rev 2
page 4/12



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