P32LF10SNK datasheet(2/7 Pages) SHINDENGEN

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Electrical Characteristics (unless otherwise specified : Tc=25℃)

Item

Symbol

Conditions

Ratings

Unit

MIN

TYP

MAX

Drain-Source breakdown

voltage

ID=1mA, VGS=0V

100

Zero gate voltage drain current

VDS=100V, VGS=0V

μA

Gate-source leakage current

VGS=±20V, VDS=0V

±0.1

μA

Forward transconductance

ID=16A, VDS=10V

Static drain-source on-state

resistance

ID=16A, VGS=10V

0.0144 0.018

Gate threshold voltage

Vth

ID=1mA, VDS=10V

Source-drain diode forward

voltage

IS=32A, VGS=0V

1.5

Thermal resistance

Rth(j-c)

Junction to case, with heatsink

0.89

℃/W

Total gate charge

VDD=80V, VGS=10V, ID=32A

Gate to source charge

Qgs

VDD=80V, VGS=10V, ID=32A

13.2

Gate to drain charge

Qgd

VDD=80V, VGS=10V, ID=32A

Input capacitance

Ciss

VDS=25V, VGS=0V, f=1MHz

2430

Reverce transfer capacitnce

Crss

VDS=25V, VGS=0V, f=1MHz

105

Output capacitance

Coss

VDS=25V, VGS=0V, f=1MHz

223

Turn-on delay time

td(on)

ID=16A, RL=3.13Ω, VDD=50V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

5.8

Rise time

ID=16A, RL=3.13Ω, VDD=50V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

Turn-off delay time

td(off)

ID=16A, RL=3.13Ω, VDD=50V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

Fall time

ID=16A, RL=3.13Ω, VDD=50V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

Diode reverse recovery time

trr

IF=32A, VGS=0V, di/dt=100A/μs

Diode reverse recovery charge

Qrr

IF=32A, VGS=0V, di/dt=100A/μs

105

※︓See the original Specifications

(BR)DSS

DSS

GSS

DS(ON)

Shindengen Electric Manufacturing Co., Ltd.

2/7

P32LF10SNK_Rev.02(2020.07)

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