FSB50825B datasheet(11/14 Pages) ONSEMI

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FSB50825B/FSB50825BS

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COM

VDD

LIN

HIN

COM

VDD

LIN

HIN

COM

VDD

LIN

HIN

(1 ) COM

(2 )VB(U)

(3 )VDD(U)

(4 ) IN(UH)

(5 ) IN(UL)

(6 )N.C

(7 )VB(V)

(8 )VDD(V)

(9 ) IN(VH)

(10 ) IN(VL)

(11 ) VTS

(12 ) VB(W)

(13 ) VDD(W)

(14 ) IN(WH)

(15 ) IN(WL)

(16 ) N.C

( 17 )P

(18 )U ,VS(U)

(19 )NU

( 22 )NW

15 V

Supply

VDC

For current-sensing and protection

VTS

(21 )V ,VS(V)

(20 )NV

(23 ) W ,VS(W)

Figure 10. Example of Application Circuit

NOTE: 14. About pin position, refer to Figure 1.

15. RC−coupling (R5 and C5, R4 and C6) and C4 at each input of Motion SPM 5 product and MCU are useful to prevent

improper input signal caused by surge−noise.

16. The voltage−drop across R3 affects the low−side switching performance and the bootstrap characteristics since it is placed

between COM and the source terminal of the low−side MOSFET. For this reason, the voltage−drop across R3 should be less

than 1 V in the steady−state.

17. Ground−wires and output terminals, should be thick and short in order to avoid surge−voltage and malfunction of HVIC.

18. All the filter capacitors should be connected close to Motion SPM 5 product, and they should have good characteristics for

rejecting high−frequency ripple current.

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