P90FG5R5SL datasheet(2/7 Pages) SHINDENGEN

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Electrical Characteristics (unless otherwise specified : Tc=25℃)

Item

Symbol

Conditions

Ratings

Unit

MIN

TYP

MAX

Drain-Source breakdown

voltage

ID=1mA, VGS=0V

Zero gate voltage drain current

VDS=55V, VGS=0V

μA

Gate-source leakage current

VGS=±20V, VDS=0V

±0.1

μA

Forward transconductance

ID=45A, VDS=10V

Static drain-source on-state

resistance

ID=45A, VGS=10V

0.003 0.0038

Static drain-source on-state

resistance

ID=45A, VGS=4.5V

0.004 0.0054

Gate threshold voltage

Vth

ID=1mA, VDS=10V

1.5

2.5

Source-drain diode forward

voltage

IS=90A, VGS=0V

1.5

Thermal resistance

Rth(j-c)

Junction to case

0.97

℃/W

Total gate charge

VDD=44V, VGS=10V, ID=90A

106

Gate to source charge

Qgs

VDD=44V, VGS=10V, ID=90A

Gate to drain charge

Qgd

VDD=44V, VGS=10V, ID=90A

Input capacitance

Ciss

VDS=25V, VGS=0V, f=1MHz

5130

Reverce transfer capacitnce

Crss

VDS=25V, VGS=0V, f=1MHz

320

Output capacitance

Coss

VDS=25V, VGS=0V, f=1MHz

600

Turn-on delay time

td(on)

ID=45A, RL=0.61Ω, VDD=27.5V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

Rise time

ID=45A, RL=0.61Ω, VDD=27.5V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

Turn-off delay time

td(off)

ID=45A, RL=0.61Ω, VDD=27.5V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

103

Fall time

ID=45A, RL=0.61Ω, VDD=27.5V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

Diode reverse recovery time

trr

IF=90A, VGS=0V, di/dt=100A/μs

Diode reverse recovery charge

Qrr

IF=90A, VGS=0V, di/dt=100A/μs

※︓See the original Specifications

(BR)DSS

DSS

GSS

DS(ON)

Shindengen Electric Manufacturing Co., Ltd.

2/7

P90FG5R5SL_Rev.01(2020.01)

P90FG5R5SL Datasheet(PDF) 2 Page - Shindengen Electric Mfg.Co.Ltd

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