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STP35NF10 Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd |
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STP35NF10 Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd |
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3 / 7 page ![]() TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics Transconductance Capacitance 0 15 30 45 60 75 0 2468 10 VDS - Drain-to-Source Voltage (V) VGS = 10 thru 5V 2V 4 V 0 20 40 60 80 100 0 15304560 75 TC = - 55 °C 25 °C 125 °C ID - Drain Current (A) 0 700 1400 2100 2800 3500 0 20406080 100 VDS - Drain-to-Source Voltage (V) Ciss Coss Crss Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 0 15 30 45 60 75 0 123 456 VGS - Gate-to-Source Voltage (V) 25 °C - 55 °C TC = 125 °C 0.0 2 0.0 4 0.0 6 0.0 8 0. 10 0 15304560 75 ID - Drain Current (A) VGS = 10 V VGS = 4.5V 0 4 8 12 16 20 0 1020 3040 506070 Qg - Total Gate Charge (nC) VDS = 50 V ID =10 A E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP35NF10 3 |
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