P168FP7R5SN datasheet(2/7 Pages) SHINDENGEN

2 / 7 page

Electrical Characteristics (unless otherwise specified : Tc=25℃)

Item

Symbol

Conditions

Ratings

Unit

MIN

TYP

MAX

Drain-Source breakdown

voltage

ID=1mA, VGS=0V

Zero gate voltage drain current

VDS=75V, VGS=0V

μA

Gate-source leakage current

VGS=±20V, VDS=0V

±0.1

μA

Forward transconductance

ID=84A, VDS=10V

37.5

Static drain-source on-state

resistance

ID=84A, VGS=10V

0.0022 0.0028

Gate threshold voltage

Vth

ID=1mA, VDS=10V

Source-drain diode forward

voltage

IS=168A, VGS=0V

1.5

Thermal resistance

Rth(j-c)

Junction to case, with heatsink

0.63

℃/W

Total gate charge

VDD=60V, VGS=10V, ID=168A

155

Gate to source charge

Qgs

VDD=60V, VGS=10V, ID=168A

Gate to drain charge

Qgd

VDD=60V, VGS=10V, ID=168A

Input capacitance

Ciss

VDS=25V, VGS=0V, f=1MHz

9600

Reverce transfer capacitnce

Crss

VDS=25V, VGS=0V, f=1MHz

480

Output capacitance

Coss

VDS=25V, VGS=0V, f=1MHz

1010

Turn-on delay time

td(on)

ID=84A, RL=0.45Ω, VDD=37.5V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

Rise time

ID=84A, RL=0.45Ω, VDD=37.5V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

Turn-off delay time

td(off)

ID=84A, RL=0.45Ω, VDD=37.5V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

114

Fall time

ID=84A, RL=0.45Ω, VDD=37.5V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

Diode reverse recovery time

trr

IF=168A, VGS=0V, di/dt=100A/μs

Diode reverse recovery charge

Qrr

IF=168A, VGS=0V, di/dt=100A/μs

120

※︓See the original Specifications

(BR)DSS

DSS

GSS

DS(ON)

Shindengen Electric Manufacturing Co., Ltd.

2/7

P168FP7R5SN_Rev.03(2020.07)

P168FP7R5SN Datasheet(PDF) 2 Page - Shindengen Electric Mfg.Co.Ltd

P168FP7R5SN Datasheet(HTML) 2 Page - Shindengen Electric Mfg.Co.Ltd

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL