LM4864

www.ti.com

SNAS109F – SEPTEMBER 1999 – REVISED MAY 2013

Figure 4. DIE LAYOUT (B-STEP)

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Supply Voltage

6.0V

Storage Temperature

−65°C to +150°C

Input Voltage

Internally limited

2000V

200V

Junction Temperature

150°C

Vapor Phase (60 sec.)

215°C

Soldering

Small Outline Package

Information

Infrared (15 sec.)

220°C

56° C/W

210°C/W

35°C/W

170°C/W

Thermal Resistance

*

37°C/W

*

107°C/W

(6)

63°C/W

(6)

12°C/W

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical

specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the

Operating Ratings. Specifications are not specified for parameters where no limit is given, however, the typical value is a good indication

of device performance.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3)

(4)

Human body model, 100pF discharged through a 1.5k

Ω resistor.

(5)

Machine Model, 220pF – 240pF discharged through all pins.

(6)

Copyright © 1999–2013, Texas Instruments Incorporated

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