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NTMFS006N12MC Datasheet(PDF) 2 Page - ON Semiconductor

Part # NTMFS006N12MC
Description  MOSFET - Power, Single N-Channel
PDF  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTMFS006N12MC Datasheet(HTML) 2 Page - ON Semiconductor

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NTMFS006N12MC
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
120
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
ID = 250 A, ref to 25°C
32
mV/°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 120 V
TJ = 25°C
1
mA
TJ = 125°C
100
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±20 V
±100
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 260 mA
2.0
4.0
V
Threshold Temperature Coefficient
VGS(TH)/TJ
ID = 250 A, ref to 25°C
−9.6
mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V
ID = 46 A
5.0
6.0
mW
VGS = 6.0 V
ID = 23 A
7.2
13
mW
Forward Transconductance
gFS
VDS =15 V, ID = 46 A
130
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = 60 V
3365
pF
Output Capacitance
COSS
1490
Reverse Transfer Capacitance
CRSS
5.8
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 60 V; ID = 46 A
42
nC
Threshold Gate Charge
QG(TH)
VGS = 6.0 V, VDS = 60 V; ID = 46 A
10.0
Gate−to−Source Charge
QGS
16
Gate−to−Drain Charge
QGD
6.3
Plateau Voltage
VGP
5.0
V
Total Gate Charge
QG(TOT)
26
nC
Output Charge
QOSS
VGS = 0 V, VDS = 60 V
122
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
td(ON)
VGS = 10 V, VDS = 60 V,
ID = 46 A, RG = 2.5 W
19
ns
Rise Time
tr
5.6
Turn−Off Delay Time
td(OFF)
28
Fall Time
tf
5.7
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 46 A
TJ = 25°C
0.86
1.2
V
TJ = 125°C
0.76
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 300 A/ms,
IS = 46 A
49
ns
Charge Time
ta
24
Discharge Time
tb
25
Reverse Recovery Charge
QRR
161
nC
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 1000 A/ms,
IS = 46 A
44
ns
Charge Time
ta
27
Discharge Time
tb
17
Reverse Recovery Charge
QRR
475
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.



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