ACE1S100B datasheet(1/2 Pages) ACE

Part #	ACE1S100B

Description	N-Channel Enhancement Mode Power MOSFET

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE1S100B

N-Channel Enhancement Mode Power MOSFET

VER 1.1

1

Description

⚫

DC/DC Converters in Computing, servers, POL

⚫

Isolated DC/DC Converters in Telecom and Industrial

Features

⚫

VDS=100V, ID=8.5A

⚫

RDS(ON)1@VGS = 10V, TYP 95mΩ

⚫

RDS(ON)1@VGS = 6V, TYP 106mΩ

⚫

RDS(ON)2@VGS = 4.5V, TYP 120mΩ

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous)*AC

TC=25℃

ID

8.5

A

TC=100℃

6.8

Drain Current (Pulsed)*B

IDM

60

A

Power Dissipation

TC=25℃

PD

2.08

W

Operating temperature / storage temperature

TJ/TSTG

-55~150

°C

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current r

ating is based on the t≤ 10s junction to ambient thermal resistance rating.

Thermal Resistance Ratings

Parameter

Symbol

Maximum

Unit

Maximum Junction-to-Ambient

t ≤ 10s

RthJA

25

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

6

Ordering information

ACE1S100B XX + H

PD：PDFN3*3-8L

Pb - free

Halogen - free

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ACE1S100B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

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