ACE1S4426B datasheet(1/3 Pages) ACE

Part #	ACE1S4426B

Description	Dual N-Channel Enhancement Mode Power MOSFET

PDF	3 Pages

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Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE1S4426B

Dual N-Channel Enhancement Mode Power MOSFET

VER 1.1

1

Description

⚫

DC/DC Converters in Computing, Servers, and POL

⚫

Isolated DC/DC Converters in Telecom and Industrial

Features

⚫

VDS= 40V

⚫

ID = 10.6A

⚫

RDS(ON) @VGS = 10V, TYP 8mΩ

⚫

RDS(ON) @VGS = 4.5V, TYP10.5mΩ

Absolute Maximum Ratings

TA=25℃, unless otherwise noted.

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

40

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous) *AC

TA=25°C

ID

10.6

A

TA=70°C

8.5

Drain Current (Pulse) *B

IDM

42

A

Power Dissipation

TA=25°C

PD

2

W

Operating Temperature/ Storage Temperature

TJ//TSTG

-55~150

°C

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t

≤ 10s junction to ambient thermal resistance rating.

Thermal Resistance Ratings

Parameter

Symbol

Typical

Unit

Maximum Junction-to-Ambient

t

≤ 10s

RthJA

62.5

°C/W

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