ACE2N7002KU datasheet(5/9 Pages) ACE

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ACE2N7002KU

N-Channel Enhancement Mode MOSFET

VER 1.1

Electrical Characteristics

TA=25℃, unless otherwise noted.

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250 uA

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250uA

1.0

1.7

2.5

Gate Leakage Current

IGSS

VDS=0V,VGS=±20V

±30

Zero Gate Voltage Drain Current

IDSS

VDS=60V, VGS=0V, TJ=25℃

VDS=48V, VGS=0V, TJ=70℃

100

Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=0.5A

2.0

VGS=4.5V, ID=0.2A

4.0

Forward Trans Conductance

gfs(1)

VDS=10V, ID=0.6A

0.6

Diode Forward Voltage

VSD(1)

VGS=0V, IS=-0.45A

1.2

Dynamic

Total Gate Charge

VDD=50V, VGS=4.5V, ID

≡0.6A

1.0

1.6

Gate-Source Charge

Qgs

0.5

Gate-Drain Charge

Qgd

0.5

Input Capacitance

Ciss

VDS = 25V, f = 1 MHz, VGS = 0

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn-On Time

td(on)

VDD=30V, ID

≡0.6A, R

G=3.3

Ω,

VGS=10V, RD=52

Turn-Off Time

td(off)

(1)

Pulsed: Pulse duration = 300 μs, duty cycle 1.5%.

(2)

Pulse width limited by safe operating area.

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