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SFS1007GH Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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SFS1007GH Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 6 page ![]() SFS1001GH – SFS1008GH Taiwan Semiconductor 2 Version: A2103 THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case thermal resistance RӨJC 2 °C/W ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT Forward voltage per diode (1) SFS1001GH SFS1002GH SFS1003GH SFS1004GH IF = 5A, TJ = 25°C VF - 0.975 V SFS1005GH SFS1006GH - 1.300 V SFS1007GH SFS1008GH - 1.700 V Reverse current @ rated VR per diode (2) TJ = 25°C IR - 1 µA TJ = 125°C - 200 µA Junction capacitance SFS1001GH SFS1002GH SFS1003GH SFS1004GH 1MHz, VR = 4.0V CJ 70 - pF SFS1005GH SFS1006GH SFS1007GH SFS1008GH 50 - pF Reverse recovery time per diode IF = 0.5A, IR = 1.0A Irr = 0.25A trr - 35 ns Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING SFS10xGH TO-263AB (D 2PAK) 800 / Tape & Reel Notes: 1. “x” defines voltage from 50V(SFS1001GH) to 600V(SFS1008GH) |
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