QPA1022DEVB datasheet(12/17 Pages) QORVO

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QPA1022D

8.5 – 11 GHz 4 W GaN Power Amplifier

Data Sheet Rev B, Feb 2021 | Subject to change without notice

12 of 17

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Thermal and Reliability Information

Parameter

Test Conditions

Value

Units

Thermal Resistance (θJC) (1)

Tbase = 85 ºC, VD = 22 V, IDQ = 180 mA, PDISS = 3.96 W,

CW, No RF (quiescent DC operation)

8.3

ºC/W

Channel Temperature, TCH (No RF) (2)

118

ºC

Thermal Resistance (θJC) (1)

Tbase = 85 ºC, VD = 22 V, IDQ = 180 mA, CW

Freq = 9.5 GHz, ID_Drive = 0.472 A, PIN = 18 dBm, POUT =

36.4 dBm, PDISS = 6.08 W

9.0

ºC/W

Channel Temperature, TCH (Under RF) (2)

140

ºC

Notes:

Thermal resistance is referenced to the back of Cu-Mo carrier plate, assuming carrier thickness 20 mils, eutectic die

attachment, back side of carrier temperature at 85 ºC

Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

Dissipated Power under RF Drive

Test conditions otherwise noted: VD = 22 V, IDQ = 180 mA, CW, Temperature = +8

5 °C

-10 -8

-6

-4

-2

10 12 14 16 18

Pin (dBm)

Pdiss vs Pin

8.5 GHz

9.5 GHz

10.5 GHz

Temperature @ 85C

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