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NSPM3042MXT5G Datasheet(PDF) 2 Page - ON Semiconductor |
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NSPM3042MXT5G Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 8 page ![]() NSPM3042 www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current *See Application Note AND8308/D for detailed explanations of datasheet parameters. Bi−Directional Surge Protection IPP IPP V I IR IT IT IR VRWM VC VBR VRWM VC VBR RDYN RDYN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage VRWM I/O Pin to GND Pin 1 to 2 Pin 2 to 1 4.8 4.5 V Breakdown Voltage VBR IT = 1 mA, I/O Pin to GND Pin 1 to 2 Pin 2 to 1 4.85 4.55 5.2 5.0 6.0 6.0 V Reverse Leakage Current IR VRWM = 4.8 V, Pin 1 to Pin 2 VRWM = 4.5 V, Pin 2 to Pin 1 0.5 0.5 mA Clamping Voltage VC IEC61000−4−2, ±8 kV Contact See Figures 1 & 2 V Clamping Voltage TLP (Note 1) VC IPP = 8 A, IEC61000−4−2 Level 2 Equivalent ( ±4 kV Contact, ± 8 kV Air) 5.50 V IPP = 16 A, IEC61000−4−2 Level 4 Equivalent ( ±8 kV Contact, ± 15 kV Air) 5.74 Reverse Peak Pulse Current IPP IEC61000−4−5 (8 x 20 ms) per Figure 14 43 A Clamping Voltage 8x20 ms Waveform per Figure 14 (Note 2) VC IPP = 1 A IPP = 43 A 4.9 7.4 6.2 8.0 V Dynamic Resistance RDYN 100 ns TLP Pulse 0.03 W Junction Capacitance CJ VR = 0 V, f = 1 MHz 80 200 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP condtions: Z0 = 50 W, tp = 100 ns, tr = 1 ns, averaging window: t1 = 70 ns to t2 = 90 ns. 2. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform. |
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