STPS200170TV1 datasheet(2/7 Pages) STMICROELECTRONICS

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1 Characteristics

STPS200170TV1

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Characteristics

When the diodes are used simultaneously:

Tj(diode1) = P(diode1) X Rth(j-c) (per diode) + P(diode2) X Rth(c)

To evaluate the conduction losses use the following equation: P = 0.5 x IF(AV) + 0.0018 IF

(RMS)

Table 1.

Absolute ratings - limiting values per diode at Tamb = 25 °C, unless otherwise specified

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

170

IF(RMS)

RMS forward current

200

IF(AV)

Average forward current,

δ = 0.5

Tc = 105 °C per diode

100

IFSM

Surge non repetitive forward current tp = 10 ms Sinusoidal

700

PARM

Repetitive peak avalanche power

tp = 1 µs, Tj = 25 °C

100000

Tstg

Storage temperature range

-55 to + 150

°C

Maximum operating junction temperature(1)

thermal runaway condition for a diode on its own heatsink

150

°C

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

0.52

°C/W

Total

0.31

Rth(c)

Coupling thermal resistance

0.1

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

(1)

Pulse test: tp = 5 ms, δ < 2 %

Reverse leakage current

Tj = 25 °C

VR = VRRM

200

µA

Tj = 125 °C

100

(2)

Pulse test: tp = 380 µs, δ < 2 %

Forward voltage drop

Tj = 25 °C

IF = 100 A

0.83

Tj = 150 °C

0.63

0.68

Tj = 25 °C

IF = 200 A

0.975

Tj = 150 °C

0.78

0.86

tot

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th j

–

()

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