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TGA2976-SMEVB Datasheet(PDF) 3 Page - Qorvo, Inc

Part # TGA2976-SMEVB
Description  0.1 ??3.0 GHz 10W GaN Power Amplifier
PDF  18 Pages
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Manufacturer  QORVO [Qorvo, Inc]
Direct Link  https://www.qorvo.com/
Logo QORVO - Qorvo, Inc

TGA2976-SMEVB Datasheet(HTML) 3 Page - Qorvo, Inc

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TGA2976-SM
0.1 – 3.0 GHz 10 W GaN Power Amplifier
Data Sheet Rev. D, May 2020 | Subject to change without notice
3 of 18
www.qorvo.com
© 2020 Qorvo US, Inc. All rights reserved.
®
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Thermal Resistance (θJC) (1)
Tbase = 85 °C, VD(2) = 40 V (CW), IDQ = 360 mA,
ID_Drive = 655 mA, PIN = 27
 dBm, POUT = 40 dBm,
PDISS = 17.4
 W
3.55
ºC/W
Channel Temperature, TCH (Under RF) 3
146.8
°C
Thermal Resistance (θJC) (1)
Tbase = 85 °C, VD(2) = 50 V (CW), IDQ = 360 mA,
ID_Drive = 655 mA, PIN = 27
 dBm, POUT = 40 dBm,
PDISS =
23.6 W
3.70
ºC/W
Channel Temperature, TCH (Under RF) 3
172.3
°C
Notes:
1.
Thermal resistance measured at back of package.
2.
The drain voltage for Cascode amplifier transistor is ½ of VD
3.
IR scan equivalent. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability
Estimates
Power Dissipation and Maximum Gate Current



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