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AT25DF041B Datasheet(PDF) 2 Page - Dialog Semiconductor

Part # AT25DF041B
Description  4-Mbit, 1.7V-3.6V Minimum SPI Serial Flash Memory
PDF  4 Pages
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Manufacturer  DIALOG [Dialog Semiconductor]
Direct Link  http://www.dialog-semiconductor.com/
Logo DIALOG - Dialog Semiconductor

AT25DF041B Datasheet(HTML) 2 Page - Dialog Semiconductor

  AT25DF041B Datasheet HTML 1Page - Dialog Semiconductor AT25DF041B Datasheet HTML 2Page - Dialog Semiconductor AT25DF041B Datasheet HTML 3Page - Dialog Semiconductor AT25DF041B Datasheet HTML 4Page - Dialog Semiconductor  
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DS-25DF041B–040C–8/2017
Addendum
High Temperature Operation (125
°C)
This data sheet addendum is to be used in conjunction with the existing AT25DF041B
datasheet specifications. The Adesto AT25DF041B 4Mbit Serial Flash devices will
operate @ 125°C with the following datasheet caveats. All other parameters will meet
the existing datasheet specifications.
The ordering code suffix (CAN# Code) 'HR' or ‘HT’ must be used to ensure correct
operation at this extended temperature range. Adesto will not modify and republish the
current datasheet to reflect the CAN# ordering code or the above caveats. The
standard AT25DF041B datasheet is available at http://www.adestotech.com.
AT25DF041B
4-Mbit, 1.7V-3.6V Minimum
SPI Serial Flash Memory
DATASHEET (ADDENDUM)
1.
Electrical Specifications
1.2
DC, AC, Program and Erase Characteristics
1.1
DC and AC Operating Range
AT25DF041B-xxxHR
Operating Temperature
-40
C to +125C
Endurance (Maximum)
20,000 Cycles
Symbol
Parameter
1.7V to 3.6V
2.3V to 3.6V
Units
Min
Typ
Max
Min
Typ
Max
IUDPD
Ultra Deep Power-Down Current
.2
1
.3
1
µA
IDPD
Deep Power-Down Current
4.5
40
5
40
µA
ISB
Standby Current
25
65
25
65
µA
fSCK
Maximum Clock Frequency for All
Operation ( including 0Bh Opcode)
85
85
MHz
fRDLF
Maximum Clock Frequency for 03h
25
25
MHz
fRDDO
Maximum Clock Frequency for 3Bh
Opcode
40
40
MHz
tCSH
Minimum CS - High Time
40
25
ns
tPP
Page Program Time (256 Bytes)
2
6
2
4
ms
tBLKE
Block Erase Time (4K)
45
100
45
100
ms
Block Erase Time (32K)
250
800
250
500
ms
Block Erase Time (64K)
450
1700
450
1000
ms
tCHPE
Chip Erase Time
3.6
12
3.6
6.8
s



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