FDI9409-F085 datasheet(2/7 Pages) ONSEMI

2 / 7 page

Semiconductor Components Industries,LLC.

August-2017, Rev 2

Publication Order number:

FDI9409-F085/D

FDI9409

-F085

N-Channel PowerTrench® MOSFET

40 V, 80 A, 3.8 m

Features

Typical RDS(on) = 2.9 mΩ at VGS = 10V, ID = 80 A

Typical Qg(tot) = 43 nC at VGS = 10V, ID = 80 A

UIS Capability

RoHS Compliant

Qualified to AEC Q101

Applications

Automotive Engine Control

PowerTrain Management

Solenoid and Motor Drivers

Integrated Starter/Alternator

Primary Switch for 12V Systems

MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.

Symbol

Parameter

Ratings

Units

VDSS

Drain-to-Source Voltage

VGS

Gate-to-Source Voltage

±20

Drain Current - Continuous (VGS=10) (Note 1)

TC = 25°C

Pulsed Drain Current

TC = 25°C

See Figure 4

EAS

Single Pulse Avalanche Energy

(Note 2)

Power Dissipation

Derate Above 25oC0.63

W/oC

TJ, TSTG Operating and Storage Temperature

-55 to + 175

RθJC

Thermal Resistance, Junction to Case

1.6

oC/W

RθJA

Maximum Thermal Resistance, Junction to Ambient

(Note 3)

oC/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDI9409

-F085

TO-262

Tube

N/A

50 units

Notes:

1: Current is limited by bondwire configuration.

2: Starting TJ = 25°C, L = 34uH, IAS = 64A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche.

3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder

mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating

presented here is based on mounting on a 1 in2 pad of 2oz copper.

I2-PAK

(TO-262)

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