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LM6L4P06 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # LM6L4P06
Description  LCE P-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM6L4P06 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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LM6L4P06
Description
The LM6L4P06 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge .This
device is well suited for use as a load switch or in PWM
applications.
General Features
●
VDS =-60V,ID =-4A
RDS(ON) <120mΩ @ VGS=-10V
RDS(ON) <170mΩ @ VGS=-4.5V
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Excellent package for good heat dissipation
Application
●
Load switch
●
PWM application
Schematic diagram
Marking and pin assignment
SOT23-6L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
60P04SN
LM6L4P06
SOT-23-6L
Ø180mm
8 mm
3000 units
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-60
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
ID
-4
A
Pulsed Drain Current
IDM
-12
A
Maximum Power Dissipation
PD
1.5
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
Thermal Characteristic
Thermal Resistance, Junction-to-Ambient
(Note 2)
RθJA
83.3
/W
℃
LCE P-Channel Enhancement Mode Power MOSFET
Rev :
www.leiditech.com
01.06.2018
1/6


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