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FDMC010N08C Datasheet(PDF) 4 Page - ON Semiconductor

Part # FDMC010N08C
Description  N-Channel Shielded Gate PowerTrench짰 MOSFET
PDF  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMC010N08C Datasheet(HTML) 4 Page - ON Semiconductor

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3
Typical Characteristics T
J = 25 °C unless otherwise noted.
Figure 1.
0
1
2345
0
30
60
90
120
150
VGS = 5 V
VGS = 6 V
VGS = 10 V
VGS = 7 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 5.5 V
VGS = 8 V
V
DS, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics
Figure2.
030
60
90
120
150
0
1
2
3
4
5
VGS = 10 V
VGS = 8 V
VGS = 5 V
VGS = 6 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
VGS = 7 V
VGS = 5.5 V
NormalizedOn-Resistance
vs. Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
-75
-50
-25
0
25
50
75
100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = 16 A
VGS = 10 V
TJ, JUNCTION TEMPERATURE (oC)
vs. Junction Temperature
Figure 4.
45
678
9
10
0
20
40
60
80
TJ = 125 oC
ID = 16 A
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
On-Resistance vs. Gate to
Source Voltage
Figure 5. Transfer Characteristics
23
45678
9
10
0
30
60
90
120
150
TJ = 150 oC
VDS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.00.2
0.40.60.8
1.01.2
0.001
0.01
0.1
1
10
100
150
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs. Source Current



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