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FSRV3.3-4 Datasheet(PDF) 2 Page - FutureWafer Tech Co.,Ltd |
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FSRV3.3-4 Datasheet(HTML) 2 Page - FutureWafer Tech Co.,Ltd |
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2 / 6 page  FSRV3.3-4 Ultra Low Capacitance ESD array Document Number:F120251 28-Oct-2021 V 2.0 www.futurewafer.com.tw Parameter Symbol Condition Min. Typ. Max. Units Reverse Stand-off Voltage V RWM Pin 5 to 2 - - 3.3 V Reverse Breakdown Voltage V BR IZ = 1mA Pin5 to 2 4.5 - 6.5 Forward Voltage V F IF = 15mA,Pin 2 to Pin 5. - - 1.0 Clamping Voltage V C IPP = 5A tp = 8/20us - 6 - IPP = 14A tp = 8/20us - - 25 Reverse Leakage Current I R Pin 5 to Pin 2. - - 0.9 uA C I/O Vdc = 0V,f = 1MHZ - 3 3.5 pF Junction Capacitance C I/O-I/O - 1.5 - 6. Electrical Characteristics 7. Rating and Characteristic Curve FSRV3.3-4 Fig 1 Peak Pulse Power vs Pulse Time Time-Pulse Duration (us) 350W,8/20uS |
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