TBR05L080AF datasheet(4/18 Pages) FUTUREWAFER

Part #	TBR05L080AF

Description	Trench MOS Barrier Schottky Rectifier

PDF	18 Pages

Scroll/Zoom	100%

Manufacturer	FUTUREWAFER [FutureWafer Tech Co.,Ltd]

Direct Link	http://futurewafer.com.tw/

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4 / 18 page

TBR05L080A/AF/B/BF/C/HT

Trench MOS Barrier Schottky Rectifier

Document Number: F22037W

05-OCT-2021 V 2.1

www.futurewafer.com.tw

4/18

3-4. Ratings and Characteristics Curve

D=0.1

D=0.2

D=0.3

D=0.5

D=0.8

D=1.0

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

Fig 2. Typical Instantaneous Forward Characteristics

Instantaneous Forward Voltage, VF (V)

TJ=25°C

TJ=125°C

TJ=100°C

TJ=150°C

Percent of Rated Peak Reverse Voltage, VR (%)

Fig 3. Typical Reverse Current Characteristics

TJ=25°C

TJ=125°C

TJ=100°C

TJ=150°C

Fig 4. Typical Junction Capacitance

Reverse Voltage, VR (V)

t - Pulse Duration (s)

Junction To Ambient

Fig 1. Maximum Forward Current Derating Curve

TM - Mount Temperature (°C)

Fig 5. Forward Power Loss Characteristics

Average Forward Current (A)

TM = 125°C

TA = 25°C

Fig 6. Typical Transient Thermal Impedance

TM measured at cathode

terminal mount typical values

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