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FDWS9510L-F085 Datasheet(PDF) 2 Page - ON Semiconductor |
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FDWS9510L-F085 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 7 page  FDWS9510L−F085 www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Parameter Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain−to−Source Breakdown Voltage ID = −250 mA, VGS = 0 V −40 − − V IDSS Drain−to−Source Leakage Current VDS = −40 V, VGS = 0 V TJ = 25°C − − 1 mA TJ = 175°C (Note 4) − − 1 mA IGSS Gate−to−Source Leakage Current VGS = ±16 V − − ±100 nA ON CHARACTERISTICS VGS(th) Gate−to−Source Threshold Voltage VGS = VDS, ID = −250 mA −1 −1.8 −3 V RDS(on) Drain−to−Source On−Resistance ID = −25 A, VGS = −4.5 V − 18 23 mW ID = −50 A VGS = −10 V TJ = 25°C − 11 13.5 mW TJ = 175°C (Note 4) − 18.8 23 DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = −20 V, VGS = 0 V, f = 1 MHz − 2320 − pF Coss Output Capacitance − 811 − Crss Reverse Transfer Capacitance − 38 − Rg Gate Resistance VGS = 0.5 V, f = 1 MHz − 23 − W Qg(tot) Total Gate Charge VGS = 0 to −10 V − 28 37 nC Qg(th) Threshold Gate Charge VGS = 0 to −1 V − 4 − Qgs Gate−to−Source Gate Charge VDD = −20 V, ID = −50 A − 7 − Qgd Gate−to−Drain “Miller” Charge − 4 − SWITCHING CHARACTERISTICS ton Turn−On Time VDD = −20 V, ID = −50 A, VGS = −10 V, RGEN = 6 W − − 20 ns td(on) Turn−On Delay Time − 10 − tr Turn−On Rise Time − 4 − td(off) Turn−Off Delay Time − 110 − tf Turn−Off Fall Time − 37 − toff Turn−Off Time − − 222 DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source−to−Drain Diode Voltage ISD = −50 A, VGS = 0 V − −1 −1.25 V ISD = −25 A, VGS = 0 V − −0.9 −1.2 Trr Reverse Recovery Time IF = −50 A, dISD/dt = 100 A/ms − 44 62 ns Qrr Reverse Recovery Charge − 31 47 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production |
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