1.2

SiC Schottky Diode and Characteristics

The following table lists the SiC diode ratings and characteristics per SiC diode of the MSCSM70HM05CAG device.

Table 1-5. SiC Schottky Diode Ratings and Characteristics

Symbol

Characteristics

Test Conditions

Min

Typ

Max

Unit

Peak repetitive reverse voltage

—

—

700

V

Reverse leakage

current

—

45

600

µA

—

750

—

DC forward current

—

—

150

—

A

Diode forward

voltage

—

1.5

1.8

V

—

1.9

—

Total capacitive

charge

—

—

399

—

nC

C

Total capacitance

—

744

—

pF

—

648

—

Junction-to-case thermal resistance

—

—

0.326

°C/W

1.3

Thermal and Package Characteristics

The following table lists the thermal and package characteristics of MSCSM70HM05CAG device.

Table 1-6. Thermal and Package Characteristics

Symbol

Characteristics

Min

Max

Unit

RMS isolation voltage, any terminal to case t =1 min,

50 Hz/60 Hz

4000

—

V

Operating junction temperature range

–40

175

°C

Recommended junction temperature under switching

conditions

–40

Storage temperature range

–40

125

Operating case temperature

–40

125

Torque

Mounting

torque

To heatsink

M6

3

5

N.m

For terminals

M5

2

3.5

Wt

Package weight

—

300

g

MSCSM70HM05CAG

Electrical Specifications

Datasheet

DS00003927A-page 5