1.

Electrical Specifications

This section provides the electrical specifications of the MSCSM120HM063CAG device.

1.1

SiC MOSFET Characteristics

The following table lists the absolute maximum ratings per SiC MOSFET of the MSCSM120HM063CAG device.

Table 1-1. Absolute Maximum Ratings per SiC MOSFET

Symbol

Parameter

Maximum Ratings

Unit

Drain-Source voltage

1200

V

Continuous

drain current

333

A

265

Pulsed drain current

660

Gate-Source voltage

–10/25

V

Drain-Source ON resistance

7.8

mΩ

Power

dissipation

873

W

Note:  1. Specification of SiC MOSFET device but output current must be limited due to size of power connectors.

The following table lists the electrical characteristics per SiC MOSFET of the MSCSM120HM063CAG device.

Table 1-2. Electrical Characteristics per SiC MOSFET

Symbol

Characteristics Test Conditions

Min

Typ

Max

Unit

Zero gate

voltage drain

current

—

40

400

µA

Drain–Source

on resistance

—

6.3

7.8

mΩ

—

10

—

Gate threshold

voltage

1.8

2.8

—

V

Gate–Source

leakage current

—

—

400

nA

MSCSM120HM063CAG

Electrical Specifications

Datasheet

DS00003929A-page 3