NTMTS001N06CL datasheet(2/7 Pages) ONSEMI

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NTMTS001N06CL

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/

ID = 250 mA, ref to 25°C

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 60 V

TJ = 25 °C

TJ = 125°C

250

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = 20 V

100

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.2

2.2

Threshold Temperature Coefficient

VGS(TH)/TJ

ID = 250 mA, ref to 25°C

−5.53

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V

ID = 50 A

0.73

0.81

Drain−to−Source On Resistance

RDS(on)

VGS = 4.5 V

ID = 50 A

0.94

1.05

Forward Transconductance

gFS

VDS =15 V, ID = 50 A

275

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz, VDS = 25 V

12300

Output Capacitance

COSS

6225

Reverse Transfer Capacitance

CRSS

130

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 30 V; ID = 50 A

165

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 30 V; ID = 50 A

74.3

Threshold Gate Charge

QG(TH)

15.6

Gate−to−Source Charge

QGS

28.7

Gate−to−Drain Charge

QGD

14.7

Plateau Voltage

VGP

2.59

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

td(ON)

VGS = 4.5 V, VDS = 30 V,

ID = 50 A, RG = 2.5 W

47.2

Rise Time

25.2

Turn−Off Delay Time

td(OFF)

70.7

Fall Time

23.3

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 50 A

TJ = 25°C

0.77

1.2

TJ = 125°C

0.63

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 50 A

98.9

Charge Time

66.8

Discharge Time

32.1

Reverse Recovery Charge

QRR

229

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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