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AOU413 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOU413 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 5 page  Symbol VDS VGS IDM IAR EAR TJ, TSTG Symbol Typ Max RθJA 40 50 RθJL 2.5 3 V V ±20 25 A -12 30 50 A Gate-Source Voltage Drain-Source Voltage -40 Pulsed Drain Current -12 -12 -30 Avalanche Current C Continuous Drain Current B,G Maximum Units Parameter TA=25°C G TA=100°C G Absolute Maximum Ratings TA=25°C unless otherwise noted ID Junction and Storage Temperature Range -55 to 175 Repetitive avalanche energy L=0.1mH C mJ Power Dissipation B TC=25°C PD W TC=100°C °C Maximum Junction-to-Case C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A Steady-State °C/W AOU413 P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) RDS(ON) < 69mΩ (VGS = -4.5V) General Description The AOU413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOU413 is Pb-free (meets ROHS & Sony 259 specifications). AOU413L is a Green Product ordering option. AOU413 and AOU413L are electrically identical. G D S Top View Drain Connected to Tab TO-251 G D S Alpha & Omega Semiconductor, Ltd. |
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