AOU417L datasheet(1/5 Pages) AOSMD

Part #	AOU417L

Description	P-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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1 / 5 page

Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

RθJA

105

125

RθJL

2.5

3

V

±20

25

A

-18

16.2

50

A

Gate-Source Voltage

Drain-Source Voltage

-30

Pulsed Drain Current

-18

-40

Avalanche Current C

Continuous Drain

Current B,G

Maximum

Units

Parameter

TA=25°C G

TA=100°C G

Absolute Maximum Ratings TA=25°C unless otherwise noted

ID

Junction and Storage Temperature Range

-55 to 175

Repetitive avalanche energy L=0.1mH C

mJ

Power Dissipation B

TC=25°C

PD

W

TC=100°C

°C

Maximum Junction-to-Case C

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient A

Steady-State

°C/W

AOU417

P-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = -30V

ID = -18A (VGS = -10V)

RDS(ON) < 22mΩ (VGS = -10V)

RDS(ON) < 40mΩ (VGS = -4.5V)

General Description

The AOU417 uses advanced trench technology to

provide excellent RDS(ON), and low gate charge.

This device is suitable for use as a load switch or in

PWM applications. Standard product AOU417 is Pb-

free (meets ROHS & Sony 259 specifications).

AOU417L is a Green Product ordering option.

AOU417 and AOU417L are electrically identical

.

G

D

S

Top View

Drain Connected

to Tab

TO-251

G

D S

Alpha & Omega Semiconductor, Ltd.

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AOU417L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

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