AOU438 datasheet(1/5 Pages) AOSMD

Part #	AOU438

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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1 / 5 page

Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

RθJA

100

RθJC

0.8

1.5

mJ

TC=100°C

ID

85

63

200

Avalanche Current

C

30

Pulsed Drain Current

Continuous Drain

Current

B,G

Maximum

Units

Parameter

TC=25°C

G

TC=100°C

B

30

Gate-Source Voltage

Absolute Maximum Ratings TA=25°C unless otherwise noted

Maximum Junction-to-Ambient

A

V

±20

Drain-Source Voltage

W

Junction and Storage Temperature Range

A

PD

°C

Steady-State

A

Repetitive avalanche energy L=0.1mH

C

112

Power Dissipation

B

100

50

-55 to 175

TC=25°C

Maximum Junction-to-Case

C

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

°C/W

AOU438

N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 30V

ID = 85A (VGS = 10V)

RDS(ON) < 4.5mΩ (VGS = 10V)

RDS(ON) < 6.5mΩ (VGS = 4.5V)

General Description

The AOU438 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and low

gate resistance. This device is ideally suited for use

as a low side switch in CPU core power conversion.

Standard Product AOU438 is Pb-free (meets ROHS

& Sony 259 specifications). AOU438L is a Green

Product ordering option. AOU438 and AOU438L are

electrically identical .

G

D

S

Top View

Drain Connected

to Tab

TO-251

G

D S

Alpha & Omega Semiconductor, Ltd.

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AOU438 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

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