AOL1418 datasheet(2/5 Pages) AOSMD

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AOL1418

Symbol

Min

Typ

Max

Units

BVDSS

0.005

TJ=55°C

IGSS

100

VGS(th)

2.2

ID(ON)

100

6.5

TJ=125°C

6.7

8.1

8.3

10.5

gFS

VSD

0.72

Ciss

1320

1600

Coss

533

Crss

154

0.95

1.5

Qg(10V)

Qg(4.5V)

13.3

16.2

Qgs

3.2

Qgd

6.6

tD(on)

7.2

12.5

tD(off)

trr

29.7

Qrr

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Gate Drain Charge

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Gate resistance

VGS=0V, VDS=0V, f=1MHz

VGS=4.5V, VDS=15V, ID=20A

Total Gate Charge

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=0.75Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

VGS=4.5V, ID=20A

IS=1A,VGS=0V

VDS=5V, ID=20A

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

μA

Gate Threshold Voltage

VDS=VGS ID=250μA

VDS=24V, VGS=0V

VDS=0V, VGS= ±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

IF=20A, dI/dt=100A/μs

Drain-Source Breakdown Voltage

On state drain current

ID=250μA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=20A

Reverse Transfer Capacitance

IF=20A, dI/dt=100A/μs

A: The value of RθJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation

limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.

D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=175°C.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve

provides a single pulse rating.

Rev1: Dec 2005

Alpha & Omega Semiconductor, Ltd.

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