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VP3203 Datasheet(PDF) 1 Page - Microchip Technology |
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VP3203 Datasheet(HTML) 1 Page - Microchip Technology |
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1 / 14 page  2021 Microchip Technology Inc. and its subsidiaries DS20006013A-page 1 VP3203 Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-to-Drain Diode • High Input Impedance and High Gain Applications • Motor Controls • Converters • Amplifiers • Switches • Power Supply Circuits • Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) General Description The VP3203 Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited for a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Types See Table 3-1 and Table 3-2 for pin information. 3-lead TO-92 (Top view) GATE SOURCE DRAIN 3-lead SOT-89 (Top view) GATE SOURCE DRAIN DRAIN P-Channel Enhancement-Mode Vertical DMOS FET |
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