PR812BA33 datasheet(2/6 Pages) NIKOSEM

2 / 6 page

REV 1.0

K-12-1

N-Channel Enhancement Mode

Field Effect Transistor

PR812BA33

PowerFET

NIKO-SEM

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

t ≦10s

RJA

°C / W

Junction-to-Ambient

Steady-State

RJA

Junction-to-Case

Top

RJC

2.5

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C.

3The Power dissipation is based on R

JA t ≦10s value.

4The maximum current rating is package limited.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.3

1.6

2.3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

A

VDS = 20V, VGS = 0V, TJ = 55 °C

Drain-Source On-State

Resistance

RDS(ON)

VGS = 4.5V, ID = 12A

1.6

2.0

mΩ

VGS = 10V, ID = 14A

0.9

1.2

Forward Transconductance

gfs

VDS = 5V, ID = 14A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 15V, f = 1MHz

3368

Output Capacitance

Coss

1294

Reverse Transfer Capacitance

Crss

140

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

0.73

Total Gate Charge

VGS = 10V

VDS = 15V , VGS = 10V,

ID = 14A

VGS = 4.5V

32.5

Gate-Source Charge

Qgs

8.6

Gate-Drain Charge

Qgd

13.8

Turn-On Delay Time

td(on)

VDS = 15V ,

ID  14A, VGS = 10V, RGEN =6Ω

Rise Time

130

Turn-Off Delay Time

td(off)

Fall Time

148

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