BAS40 datasheet(3/10 Pages) FUTUREWAFER

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BAS40 Series

Surface Mount Switching Diode

Document No.: F21837S

27-DEC-2021 V 2.1

www.futurewafer.com.tw

FQE-001-04

Parameter

Symbol

Conditions

Min.

Max.

Units

Typ.

Reverse Breakdown Voltage

V BR

I R = 10uA

Forward Voltage

V F

I F = 1mA

0.38

I F = 40mA

1.0

Reverse Recovery Time

t rr

I F = I T = 10mA,

I rr = 1mA, R L = 100Ω

5.0

Reverse Leakage Current

I R

V R = 30V, T J = 25°C

100

Junction Capacitance

C I/O

Pin Capacitance to GND.

V dc = 0V, f = 1MHZ

5.0

4.0

Forward Voltage, V F (V)

T A = 125°C

T A = 85°C

T A = 25°C

Fig 1. Typical Forward Characteristics

Fig 2. Reverse Current

Reverse Voltage, V R (

T A = 25°C

T A = 75°C

T A = 125°C

Fig 3. Typical Junction Capacitance

Reverse Voltage, V R (V)

Fig 4. Power Derating Curve

Case Temperature, T C (°C)

3-1. Electrical Characteristics

3. Electrical Property

3-2. Ratings and Characteristics Curve (TA=25°C unless otherwise noted)

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