SAMWIN
SW4N60
REV0.1
04.10.15
General Description
This power MOSFET is produced in CHMC with
advanced VDMOS technology of SAMWIN. This
technology enable power MOSFET to have better
characteristics, such as fast switching time, low on
resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is
usually used at high efficient DC to DC converter
block and high efficiency switch mode power
supplies.
Features
N-Channel MOSFET
BV
DSS (Minimum)
R
DS(ON) (Maximum)
I
D
Qg (Typical)
P
D (@TC=25
)
: 600V
: 2.2 ohm
: 4.0A
: 20 nc
: 73W
G
S
D
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
DSS
Drain to Source Voltage
600
V
Continuous Drain Current (@Tc=25℃)
4
A
Continuous Drain Current (@Tc=100℃)
3.0
A
I
DM
Drain Current Pulsed
(Note 1)
16
A
V
GS
Gate to Source Voltage
±30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
260
mJ
E
AR
Repetitive Avalanche Energy
(Note 1)
7.3
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
Total Power Dissipation (@Tc=25℃)
73
W
Derating Factor above 25℃
0.85
W/℃
T
STG,TJ
Operating junction temperature &Storage temperature
-55~+150
℃
T
L
Maximum Lead Temperature for soldering purpose, 1/8 from Case
for 5 seconds.
300
℃
P
D
I
D
Thermal Characteristics
℃/W
62.5
-
-
Thermal Resistance, Junction-to-Ambient
R
JA
℃/W
-
0.5
-
Thermal Resistance, Case-to-Sink
R
CS
℃/W
1.72
-
-
Thermal Resistance, Junction-to-Case
R
JC
Max
Typ
Min
Units
Value
Parameter
Symbol
1/6
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