WCMB2016R4X datasheet(4/11 Pages) WEIDA

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WCMB2016R4X

Notes:

Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 µs or stable at VCC(min) > 100 µs.

BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.

AC Test Loads and Waveforms

VCC Typ

VCC

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

GND

90%

10%

90%

10%

OUTPUT

Equivalent to:

THÉVENIN EQUIVALENT

ALL INPUT PULSES

RTH

Rise Time:

1 V/ns

Fall Time:

1 V/ns

Parameters

1.8V

UNIT

13500

Ohms

10800

Ohms

RTH

6000

Ohms

VTH

0.80

Volts

Data Retention Characteristics (Over the Operating Range)

Parameter

Description

Conditions

Min.

Typ.[4]

Max.

Unit

VDR

VCC for Data Retention

1.0

1.95

ICCDR

Data Retention Current

VCC = 1.0V

CE > VCC − 0.2V,

VIN > VCC − 0.2V or VIN < 0.2V

0.5

µA

tCDR

[5]

Chip Deselect to Data

Retention Time

[6]

Operation Recovery Time

tRC

Data Retention Waveform[7]

VCC(min.)

tCDR

VDR > 1.0 V

DATA RETENTION MODE

CE or

VCC

BHE.BLE

WCMB2016R4X Datasheet(PDF) 4 Page - Weida Semiconductor, Inc.

WCMB2016R4X Datasheet(HTML) 4 Page - Weida Semiconductor, Inc.

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