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ALD110808ASC Datasheet(PDF) 2 Page - Advanced Linear Devices |
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ALD110808ASC Datasheet(HTML) 2 Page - Advanced Linear Devices |
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2 / 2 page ![]() ALD110808/ALD110808A/ALD110908/ALD110908A Advanced Linear Devices 2 Notes: 1 Consists of junction leakage currents ABSOLUTE MAXIMUM RATINGS Drain-Source voltage, VDS 10.6V Gate-Source voltage, VGS 10.6V Power dissipation 500 mW Operating temperature range PA, SA, PC, SC package 0°C to +70°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C OPERATING ELECTRICAL CHARACTERISTICS V+ = +5V (or open) V- = GND TA = 25°C unless otherwise specified CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. ALD110808A / ALD110908A ALD110808/ ALD110908 Parameter Symbol Min Typ Max Min Typ Max Unit Test Condition Gate Threshold Voltage VGS(th) 0.78 0.80 0.82 0.78 0.80 0.82 V IDS =1µA VDS = 0.1V Offset Voltage VOS 12 3 10 mV IDS=1µA VGS1-VGS2 VGS1-VGS2 Tempco ∆VOS 55 µV/ °CVDS1= VDS2 -1.7 -1.7 ID= 1µA GateThreshold Tempco ∆VGS(th) 0.0 0.0 mV/ °CID= 20µA VDS = 0.1V +1.6 +1.6 ID= 40µA On Drain Current IDS (ON) 12.0 12.0 mA VGS= +10.3V 3.0 3.0 VGS= +4.8V VDS= +5V Forward Transconductance GFS 1.4 1.4 mmho VGS = +4.8V VDS = +9.8V Transconductance Mismatch ∆GFS 1.8 1.8 % Output Conductance GOS 68 68 µmho VGS =+4.8V VDS = +9.8V Drain Source On Resistance RDS (ON) 500 500 Ω VDS = 0.1V VGS = +4.8V Drain Source On Resistance ∆RDS (ON) 0.5 0.5 % Mismatch Drain Source Breakdown BVDSX 10 10 V IDS = 1.0µA Voltage VGS = -0.2V Drain Source Leakage Current1 IDS (OFF) 10 100 10 100 pA VGS = -0.2V 44 nA VDS =10V, TA = 125°C Gate Leakage Current1 IGSS 330 3 30 pA VDS = 0V VGS = 10V 11 nA TA =125°C Input Capacitance CISS 2.5 2.5 pF Transfer Reverse Capacitance CRSS 0.1 0.1 pF Turn-on Delay Time ton 10 10 ns V+ = 5V RL= 5KΩ Turn-off Delay Time toff 10 10 ns V+ = 5V RL= 5KΩ Crosstalk 60 60 dB f = 100KHz |
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