NTLJS7D2P02P8Z datasheet(1/6 Pages) ONSEMI

Part #	NTLJS7D2P02P8Z

Description	MOSFET - Power, Single P-Channel, WDFN6 -20 V

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

1 / 6 page

August, 2020 − Rev. 0

1

Publication Order Number:

NTLJS7D2P02P8Z/D

MOSFET - Power, Single

P-Channel, WDFN6

-20 V

NTLJS7D2P02P8Z

Features

• Small Footprint (4 mm2) for Compact Design

• Low RDS(on) to Minimize Conduction Losses

• These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS

Compliant

Applications

• Battery Management

• Protection

• Power Load Switch

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

−20

V

Gate−to−Source Voltage

VGS

±8.0

V

Continuous Drain Cur-

rent RqJA (Notes 1, 3)

Steady

State

TA = 25°C

ID

−13.1

A

TA = 85°C

−9.5

Power Dissipation

RqJA (Notes 1, 3)

TA = 25°C

PD

2.40

W

Continuous Drain Cur-

rent RqJA (Notes 2, 3)

Steady

State

TA = 25°C

ID

−7.9

A

TA = 85°C

−5.7

Power Dissipation

RqJA (Notes 2, 3)

TA = 25°C

PD

0.86

W

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

52

A

Operating Junction and Storage Temperature

Range

TJ, Tstg

−55 to

+150

°C

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

Unit

Junction−to−Ambient − Steady State (Note 1)

RqJA

52

°C/W

Junction−to−Ambient − Steady State (Note 2)

RqJA

145

1. Surface−mounted on FR4 board using 1 in2 pad size, 2 oz. Cu pad.

2. Surface−mounted on FR4 board using minimum pad size, 2 oz. Cu pad.

3. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

Actual continuous current will be limited by thermal & electro−mechanical

application board design. RqCA is determined by the user’s board design.

www.onsemi.com

MARKING

DIAGRAM

See detailed ordering, marking and shipping information in the

package dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

WDFN6 (2.05x2.05)

CASE 483AV

G

S

P−CHANNEL MOSFET

D

ELECTRICAL CONNECTION

−20 V

11 mW @ −2.5 V

9 mW @ −4.5 V

RDS(on) MAX

−13.1 A

ID MAX

V(BR)DSS

YWZZ

A7D2

YW = Date Code

ZZ = Assembly Lot Code

A

= Assembly Site Code

7D2 = Specific Device Code

Similar Part No. - NTLJS7D2P02P8Z

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NTLJS1102P	119Kb / 7P	Power MOSFET ?? V, ??.1 A, COOL Single P?묬hannel, 2x2 mm, WDFN package November, 2008 ??Rev. 0
	NTLJS1102PTAG	119Kb / 7P	Power MOSFET ?? V, ??.1 A, COOL Single P?묬hannel, 2x2 mm, WDFN package November, 2008 ??Rev. 0
	NTLJS1102PTBG	119Kb / 7P	Power MOSFET ?? V, ??.1 A, COOL Single P?묬hannel, 2x2 mm, WDFN package November, 2008 ??Rev. 0
	NTLJS14D0P03P8Z	378Kb / 8P	MOSFET ??Single, P-Channel, POWERTRENCH -30 V, -11 A, 13.5 m May, 2021-Rev. 0
	NTLJS14D0P03P8ZTAG	378Kb / 8P	MOSFET ??Single, P-Channel, POWERTRENCH -30 V, -11 A, 13.5 m May, 2021-Rev. 0

More results

Similar Description - NTLJS7D2P02P8Z

Manufacturer	Part #	Datasheet	Description
Will Semiconductor Ltd.	WPM1480	507Kb / 6P	Single P-Channel, -20 V, -1.5 A,Power Mosfet
Nexperia B.V. All right...	PMN42XPE	710Kb / 14P	20 V, single P-channel Trench MOSFET
	PMPB29XPE	740Kb / 14P	20 V, single P-channel Trench MOSFET
	PMV50UPE	728Kb / 14P	20 V, single P-channel Trench MOSFET
	PMN27XPE	323Kb / 14P	20 V, single P-channel Trench MOSFET
ON Semiconductor	NTLJS17D0P03P8Z	332Kb / 6P	MOSFET - Power, Single P-Channel, WDFN6 -30 V May, 2020-Rev. P4
	NTLJS3D0N02P8Z	330Kb / 6P	MOSFET - Power, Single N-Channel, WDFN6 20 V January, 2020-Rev. 2
	NTLJS4D9N03H	337Kb / 7P	MOSFET - Power, Single N-Channel, WDFN6 30 V, 6.1 m, 15.9 A May, 2020-Rev. P3
Nexperia B.V. All right...	PMZB350UPE	701Kb / 14P	20 V, single P-channel Trench MOSFET 1 August 2012
Nexperia B.V. All right...	PMZB670UPE	1Mb / 15P	20 V, single P-channel Trench MOSFET Rev. 3 - 23 March 2012

More results

NTLJS7D2P02P8Z Datasheet(PDF) 1 Page - ON Semiconductor

NTLJS7D2P02P8Z Datasheet(HTML) 1 Page - ON Semiconductor

Similar Part No. - NTLJS7D2P02P8Z

Similar Description - NTLJS7D2P02P8Z

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL