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STM32F730V8 Datasheet(PDF) 130 Page - STMicroelectronics

Part # STM32F730V8
Description  Arm® Cortex®-M7 32b MCUFPU, 462DMIPS, 64KB Flash /256164KB RAM, USB OTG HS/FS, 18 TIMs, 3 ADCs, 21 com IF
PDF  202 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F730V8 Datasheet(HTML) 130 Page - STMicroelectronics

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Electrical characteristics
STM32F730x8
130/202
DS12536 Rev 2
The software flowchart must include the management of runaway conditions such as:
•
Corrupted program counter
•
Unexpected reset
•
Critical Data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application,
executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2
standard which specifies the test board and the pin loading.
6.3.18
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/ESDA/JEDEC JS-001-2012 and ANSI/ESD S5.3.1-2009 standards.
Table 57. EMI characteristics
Symbol Parameter
Conditions
Monitored
frequency band
Max vs.
[fHSE/fCPU] Unit
25/200 MHz
SEMI
Peak level
VDD = 3.6 V, TA = 25 °C, conforming to
IEC61967-2 ART/L1-cache OFF, over-drive ON,
all peripheral clocks enabled, clock dithering
disabled.
0.1 MHz to 30 MHz
23
dBµV
30 MHz to 130 MHz
20
130 MHz to 1 GHz
34
1 GHz to 2 GHz
24
EMI Level
4
-



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