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STM32F730V8 Datasheet(PDF) 145 Page - STMicroelectronics

Part # STM32F730V8
Description  Arm® Cortex®-M7 32b MCUFPU, 462DMIPS, 64KB Flash /256164KB RAM, USB OTG HS/FS, 18 TIMs, 3 ADCs, 21 com IF
PDF  202 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F730V8 Datasheet(HTML) 145 Page - STMicroelectronics

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DS12536 Rev 2
145/202
STM32F730x8
Electrical characteristics
185
6.3.25
Temperature sensor characteristics
6.3.26
VBAT monitoring characteristics
6.3.27
Reference voltage
The parameters given in Table 76 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 16.
Table 73. Temperature sensor characteristics
Symbol
Parameter
Min
Typ
Max
Unit
TL(1)
VSENSE linearity with temperature
-
±1
±2°C
Avg_Slope(1) Average slope
-
2.5
-
mV/°C
V25(1)
Voltage at 25 °C
-
0.76
-
V
tSTART(2)
Startup time
-
6
10
µs
TS_temp(2)
ADC sampling time when reading the temperature (1 °C accuracy)
10
-
-
µs
1. Guaranteed by characterization results.
2. Guaranteed by design.
Table 74. Temperature sensor calibration values
Symbol
Parameter
Memory address
TS_CAL1
TS ADC raw data acquired at temperature of 30 °C, VDDA= 3.3 V
0x1FF0 7A2C - 0x1FF0 7A2D
TS_CAL2
TS ADC raw data acquired at temperature of 110 °C, VDDA= 3.3 V 0x1FF0 7A2E - 0x1FF0 7A2F
Table 75. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-50-
K
Ω
Q
Ratio on VBAT measurement
-
4
-
-
Er(1)
Error on Q
–1
-
+1
%
TS_vbat(2)(2)
ADC sampling time when reading the VBAT
1 mV accuracy
5-
-
µs
1. Guaranteed by design.
2. Shortest sampling time can be determined in the application by multiple iterations.
Table 76. internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage
–40 °C < TA < +105 °C 1.18
1.21
1.24
V
TS_vrefint(1)
ADC sampling time when reading the
internal reference voltage
-10
-
-
µs
VRERINT_s(2)
Internal reference voltage spread over the
temperature range
VDD = 3V ± 10mV
-
3
5
mV



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