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STP45N60DM6 Datasheet(PDF) 6 Page - STMicroelectronics

Part # STP45N60DM6
Description  N-channel 600 V, 0.085 Ω typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP45N60DM6 Datasheet(HTML) 6 Page - STMicroelectronics

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Figure 7. Gate charge vs gate-source voltage
GADG200720171438QVG
12
10
8
6
4
2
0
600
500
400
300
200
100
0
0
8
16
24
32
40
48
VGS
(V)
VDS
(V)
Qg (nC)
VDS
VDD = 480 V
ID = 30 A
Figure 8. Static drain-source on-resistance
GADG270720171030RID
0.091
0.089
0.087
0.085
0.083
0.081
0.079
0
5
10
15
20
25
30
RDS(on)
(Ω)
ID (A)
VGS = 10 V
Figure 9. Capacitance variations
GADG250720171026CVR
10 4
10 3
10 2
10 1
10 0
10 -1
10 0
10 1
10 2
C
(pF)
VDS (V)
CISS
COSS
CRSS
f = 1 MHz
Figure 10. Normalized gate threshold voltage vs
temperature
GADG200720171435VTH
1.1
1
0.9
0.8
0.7
0.6
-75
-25
25
75
125
VGS(th)
(norm.)
Tj ( °C)
ID = 250 µA
Figure 11. Normalized on-resistance vs temperature
GADG200720171435RON
2.5
2
1.5
1
0.5
0
-75
-25
25
75
125
RDS(on)
(norm.)
Tj ( °C)
VGS = 10 V
Figure 12. Normalized V(BR)DSS vs temperature
GADG200720171436BDV
1.08
1.04
1
0.96
0.92
0.88
-75
-25
25
75
125
V(BR)DSS
(norm.)
Tj ( °C)
ID = 1 mA
STP45N60DM6, STW45N60DM6
Electrical characteristics (curves)
DS11664 - Rev 3
page 6/15



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