STB30N65DM6AG datasheet(4/15 Pages) STMICROELECTRONICS

Part #	STB30N65DM6AG

Description	Power MOSFET in a D²PAK package

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

112

VSD(2)

Forward on voltage

ISD = 28 A, VGS = 0 V

1.6

trr

Reverse recovery time

ISD = 28 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

126

Qrr

Reverse recovery charge

0.63

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 28 A, di/dt = 100 A/µs,

VDD = 60 V, TJ = 150 °C

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

220

Qrr

Reverse recovery charge

2.1

µC

IRRM

Reverse recovery current

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

STB30N65DM6AG

Electrical characteristics

DS13770 - Rev 1

page 4/15

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