STL52N60DM6 datasheet(1/14 Pages) STMICROELECTRONICS

Part #	STL52N60DM6

Description	N-channel 600 V, 72 mΩ typ., 45 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package

PDF	14 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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PowerFLAT 8x8 HV

NG1DS2PS34D5Z

Drain(5)

Gate(1)

Driver

source (2)

Power

source (3, 4)

Features

Order code

VDS

RDS(on) max.

ID

STL52N60DM6

600 V

84 mΩ

45 A

•

Fast-recovery body diode

•

Lower RDS(on) per area vs previous generation

•

Low gate charge, input capacitance and resistance

•

100% avalanche tested

•

Extremely high dv/dt ruggedness

•

Zener-protected

•

Excellent switching performance thanks to the extra driving source pin

Applications

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation,

DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent

improvement in RDS(on) per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STL52N60DM6

Product summary

Order code

STL52N60DM6

Marking

52N60DM6

Package

PowerFLAT 8x8 HV

Packing

Tape and reel

N-channel 600 V, 72 mΩ typ., 45 A, MDmesh DM6 Power MOSFET

in a PowerFLAT 8x8 HV package

STL52N60DM6

Datasheet

DS12975 - Rev 3 - June 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

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STL52N60DM6 Datasheet(PDF) 1 Page - STMicroelectronics

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