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STM8L001J3 Datasheet(PDF) 40 Page - STMicroelectronics |
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STM8L001J3 Datasheet(HTML) 40 Page - STMicroelectronics |
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40 / 58 page ![]() Electrical parameters STM8L001J3 40/58 DS12153 Rev 4 8.3.6 I/O port pin characteristics General characteristics Subject to general operating conditions for VDD and TA unless otherwise specified. All unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or an external pull-up or pull-down resistor. Iprog Programming/ erasing consumption TA=+25 °C, VDD = 3.0 V - 0.7 - mA TA=+25 °C, VDD = 1.8 V - - tRET Data retention (program memory) after 10k erase/write cycles at TA = +85 °C TRET = 55 °C 20(1) -- years Data retention (data memory) after 10k erase/write cycles at TA = +85 °C TRET = 55 °C 20(1) -- Data retention (data memory) after 300k erase/write cycles at TA = +125 °C TRET = 85 °C 1(1) -- NRW Erase/write cycles (program memory) See notes (1)(2) 100(1) - - cycles Erase/write cycles (data memory) See notes (1)(3) 100(1)(4) - - kcycles 1. Guaranteed by characterization results. 2. Retention guaranteed after cycling is 10 years at 55 °C. 3. Retention guaranteed after cycling is 1 year at 55 °C. 4. Data based on characterization performed on the whole data memory (2 Kbytes). Table 23. Flash program memory (continued) Symbol Parameter Conditions Min Typ Max (1) Unit Table 24. I/O static characteristics (1) Symbol Parameter Conditions Min Typ Max Unit VIL Input low level voltage(2) All I/Os VSS-0.3 - 0.3 x VDD V VIH Input high level voltage (2) All I/Os 0.70 x VDD -VDD+0.3 V Vhys Schmitt trigger voltage hysteresis (3) Standard I/Os - 200 - mV True open drain I/Os - 250 - Ilkg Input leakage current (4) VSS ≤ VIN ≤ VDD Standard I/Os - - 50 (5) nA VSS ≤ VIN ≤ VDD True open drain I/Os - - 200(5) VSS ≤ VIN ≤ VDD PA0 with high sink LED driver capability - - 200(5) RPU Weak pull-up equivalent resistor(6) VIN = VSS 30 45 60 k Ω CIO(7) I/O pin capacitance - - 5(8) -pF |
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