STPS2H100_V01 datasheet(2/19 Pages) STMICROELECTRONICS

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Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

IF(AV)

Average forward current

SMA

Tl = 130 °C, δ = 0.5

SMB

Tl = 135 °C, δ = 0.5

SMA Flat, SMA Flat Notch

Tl = 145 °C, δ = 0.5

SMB Flat

Tl = 150 °C, δ = 0.5

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

173

Tstg

Storage temperature range

-65 to +175

°C

Maximum operating junction temperature(1)

175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Max. value

Unit

Rth(j-l)

Junction to lead

SMA

°C/W

SMA Flat, SMA Flat Notch

SMB

SMB Flat

For more information, please refer to the following application note :

•

AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

1.00

µA

Tj = 125 °C

0.40

1.00

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 2 A

0.79

Tj = 125 °C

0.60

0.65

Tj = 25 °C

IF = 4 A

0.88

Tj = 125 °C

0.69

0.74

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.56 x IF(AV) + 0.045 x IF2(RMS)

STPS2H100

Characteristics

DS1452 - Rev 10

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