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STTH30M06S Datasheet(PDF) 5 Page - STMicroelectronics

Part # STTH30M06S
Description  600 V, 30 A ultrafast high voltage diode
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH30M06S Datasheet(HTML) 5 Page - STMicroelectronics

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Figure 7. Reverse recovery charges versus dIF/dt (typical
values)
0
100
200
300
400
500
0
50
100
150
200
250
300
350
400
450
500
QRR(nC)
dIF/dt(A/µs)
V
R = 400 V
T
j = 125 °C
I
F = IF(AV)
Figure 8. Reverse recovery softness factor versus dIF/dt
(typical values)
0.0
0.2
0.4
0.6
0.8
0
50
100
150
200
250
300
350
400
450
500
dIF/dt(A/µs)
SFACTOR
IF = I
F(AV)
VR=400V
Tj=125°C
Figure 9. Relative variations of dynamic parameters
versus junction temperature
0.0
0.4
0.8
1.2
1.6
2.0
25
50
75
100
125
Tj(°C)
IF=IF(AV)
VR=400 V
Reference: Tj=125 °C
IRM
SFACTOR
QRR
Figure 10. Junction capacitance versus reverse voltage
applied (typical values)
10
100
1
10
100
1000
C(pF)
F = 1 MHz
V
osc= 30 mVRMS
T
j = 25 °C
VR(V)
Figure 11. Relative variation of non-repetitive peak
surge forward current versus pulse duration (sinusoidal
waveform)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.1
1.0
10.0
IFSM(tp) / IFSM(10ms)
tp(ms)
Figure 12. Relative variation of non-repetitive peak
surge forward current versus initial junction temperature
(sinusoidal waveform)
IFSM(Tj) / IFSM(25 °C)
Tj(°C)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
175
STTH30M06S
Characteristics (curves)
DS13736 - Rev 2
page 5/10



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